SJT1941PPN is PNP silicon transistor fabricated with Silan planar transistor technology, The advanced technology of multilayer epitaxy, ultra-low density of crystal defects, polyimide passivation, and thin chip of less than 200 microns makes low thermal resistance, large power dissipation and good reliability of SJT1941PPN. Optimized die structure design and package design promote secondary breakdown resistance of the device.
This product is mainly used for output power level of audio power amplifier in household appliances, AV equipment, professional audio equipment and car stereo audio, has the characteristics of wide linear range and low distortion.
The package available is TO-3P.
Complementary NPN transistor: SJT5198NPN.
High breakdown voltage margin
Very low leakage current
High output power:100W
High secondary breakdown tolerance and reliability