SFR35F60P2 is a Super-Fast Recovery Diode, fabricated in advanced silicon planar epitaxial technology. The process parameter and the device structure are fine tuned with optimized performance of forward voltage drop and reverse recovery time.
Accuracy epitaxial dope control, advanced planar junction terminal structure and the platinum doped life control, guarantee the best overall performance, ruggedness and reliability characteristics.
This device is intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as free-wheeling diode in low voltage inverters and chopper motor drivers.
Ultrafast 60 Nanosecond Recovery Time
High current capability
Low Forward Voltage Drop
High Surge Current Capability
Low Reverse Current Leakage
175°C Operating Junction Temperature
title | Types of | Size (KB) | date | Download the latest English version |
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SFR35F60P2 | 0 | 1970-01-01 | SFR35F60P2 Datasheet_1.4 |