SGT20T135QR1P7/PN/PT inverse IGBT employs Silan new Reverse Conducting technology, features low conduction loss, low switching loss, high breakdown voltage, internal Freewheeling diode, positive/negative temperature coefficient. It is suitable for Induction heating field.
20A, 1350V, VCE(sat)(typ.)=1.8V@IC=20A
Low conduction loss
Internal freewheeling diode
High breakdown voltage