SGT20T135QR1P7/PN/PT inverse IGBT employs Silan new Reverse Conducting technology, features low conduction loss, low switching loss, high breakdown voltage, internal Freewheeling diode, positive/negative temperature coefficient. It is suitable for Induction heating field.
20A, 1350V, VCE(sat)(typ.)=1.8V@IC=20A
Low conduction loss
Internal freewheeling diode
High breakdown voltage
title | Types of | Size (KB) | date | Download the latest English version |
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SGT20T135QR1P7(PN)(PT) | 0 | 1970-01-01 | SGT20T135QR1P7(PN)(PT) Datasheet_1.7 |