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SGT20T135QR1P7/PN/PT  inverse IGBT employs Silan new Reverse Conducting technology, features low conduction loss, low switching loss, high breakdown voltage, internal Freewheeling diode, positive/negative temperature coefficient. It is suitable for Induction heating field.

Main feature
  • 20A, 1350V, VCE(sat)(typ.)=1.8V@IC=20A

  • Low conduction loss

  • Internal freewheeling diode

  • High breakdown voltage


Documents
title Types of Size (KB) date Download the latest English version
SGT20T135QR1P7(PN)(PT) 0 1970-01-01 SGT20T135QR1P7(PN)(PT) Datasheet_1.7