The SGT20T120QD1P7 IGBT is fabricated using a new generation of trench field stop technology, features low conduction loss, positive temperature coefficient for easy parallel operation. This device is applicable to UPS, SMPS, and PFC fields.
20A, 1200V, VCE(sat)(typ.)=2.5V@IC=20A
Low conduction loss
Fast switching
High breakdown voltage
title | Types of | Size (KB) | date | Download the latest English version |
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SGT20T120QD1P7 | 0 | 1970-01-01 | SGT20T120QD1P7 Datasheet_1.0 |