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The SGT20T120QD1P7 IGBT is fabricated using a new generation of trench field stop technology, features low conduction loss, positive temperature coefficient for easy parallel operation. This device is applicable to UPS, SMPS, and PFC fields.

Main feature
  • 20A, 1200V, VCE(sat)(typ.)=2.5V@IC=20A

  • Low conduction loss

  • Fast switching

  • High breakdown voltage


Documents
title Types of Size (KB) date Download the latest English version
SGT20T120QD1P7 0 1970-01-01 SGT20T120QD1P7 Datasheet_1.0
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